DMP21D1UTQ-13

Overview

The DMP21D1UTQ is a P-channel enhancement mode MOSFET in an SOT523 package. It features a drain-source voltage (BVDSS) of -20V and a gate-source voltage (VGSS) of ±8V. At TA = +25°C, the static drain-source on-resistance (RDS(ON)) is 710mΩ at VGS = -4.5V with ID = -400mA, 930mΩ at VGS = -2.5V with ID = -300mA, and 1250mΩ at VGS = -1.8V with ID = -100mA. The continuous drain current is -0.63A at +25°C. Operating temperature range is -55°C to +150°C.

Feature Summary

• Low on-resistance for high-efficiency power management
• Low gate threshold voltage enabling low-voltage drive compatibility
• ESD protected gate structure
• Suitable for automotive applications requiring specific change control

Applications

• DC-DC converters
• Load switches
• Power-management functions

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS45538 Rev. 2-2. Confirm the part number matches the requested model exactly. Ensure the device meets AEC-Q101 qualification requirements if used in automotive contexts. Check that the packaging corresponds to the specified tape and reel quantity.

Selection Notes

Select this component for compact designs requiring a P-channel MOSFET with a -20V rating. The SOT523 package provides a small footprint suitable for space-constrained PCB layouts. Consider the RDS(ON) values at various gate voltages when designing the drive circuitry to ensure adequate current handling capabilities.

Part Context

This device belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is manufactured in IATF16949 certified facilities and is fully RoHS compliant.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.