DMP21D6UFB4-7B

$0.33

Description：MOSFET P-CH 20V 580MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f0382da03cb2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 580MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：46.1 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：510mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP21D6UFB4-7B

Overview

The DMP21D6UFB4-7B is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a 0.4mm profile and 0.6mm² footprint. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of -20V, a gate-source voltage (VGSS) of ±8V, and a continuous drain current (ID) of -0.58A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 1.0Ω max at VGS = -4.5V, 1.5Ω max at VGS = -2.5V, and 2.0Ω max at VGS = -1.8V. Power dissipation is 0.51W on FR-4 with minimum pads and 0.98W with thermal vias.

Feature Summary

Extremely compact X2-DFN1006-3 package offering a footprint 13 times smaller than SOT23.
Low profile design suitable for space-constrained portable electronics.
Optimized for low on-state resistance while maintaining fast switching performance.
Integrated ESD protection on the gate terminal.

Applications

Portable Electronics
High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix '-7B' to confirm reel size and tape pitch specifications. Ensure compatibility with the X2-DFN1006-3 pad layout during PCB design. Confirm RoHS compliance status if required by specific regional regulations. Check moisture sensitivity level requirements against storage conditions.

Selection Notes

Select this component for designs requiring minimal board space due to its small footprint. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate thermal performance based on the intended copper area and via configuration. Verify that the -20V rating meets the system's maximum voltage requirements.

Part Context

This device belongs to the DMP21 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molded plastic case. The product is fully RoHS compliant and halogen/antimony free. It is designed for surface mount assembly using standard reflow soldering processes.