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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.5A SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP2240UWQ-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SOT-323 surface-mount package and operates with a drain-source voltage of -20V and a continuous drain current of -1.5A at 25°C. The device exhibits low on-state resistance, specified as 150mΩ maximum at VGS = -4.5V and ID = -2.0A. It includes fast switching characteristics with turn-on rise time of 10.3ns and turn-off fall time of 22.2ns. Total power dissipation is rated at 250mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Features very low gate threshold voltage (VGS(th) ≤ 1V) and low input/output leakage currents.
- Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards if the application demands AEC-Q101 qualification. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Check for any recent product change notifications regarding manufacturing site or material composition updates.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required in a SOT-323 footprint. Consider its -20V breakdown voltage and -1.5A current rating for low-power switching tasks. Evaluate the thermal resistance of 500°C/W for heat dissipation constraints in dense layouts. Verify compatibility with logic-level gate drive voltages given the low threshold voltage specification.
Part Context
This part belongs to the DMP2240UWQ series of P-channel enhancement mode field effect transistors. It is designed specifically for minimizing on-state resistance without compromising switching speed. The device utilizes a molded plastic case with a flammability classification rating of 94V-0. It is intended for use in portable electronics and power management circuits where space and efficiency are critical factors.
Replacement Considerations
Direct substitutes must match the P-channel type, -20V Vds, and SOT-323 package. Verify equivalent Rds(on) and current ratings. Cross-reference AEC-Q101 qualification status if automotive reliability is required. Ensure pinout compatibility and thermal characteristics align with the original design specifications.
