DMP2900UVQ-13

$0.42

Description：MOSFET 2P-CH 20V 0.85A SOT563
Series：-

SKU:478680b5f3c1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.85A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：850mA (Ta)
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：49pF @ 16V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMP2900UVQ-13

Overview

The DMP2900UVQ-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a temperature range of -55°C to +150°C. The device utilizes an SOT563 package and offers low on-state resistance, with maximum values of 0.75Ω at VGS = -4.5V and 1.05Ω at VGS = -2.5V. Continuous drain current ratings are -0.85A at +25°C and -0.68A at +70°C. Total gate charge is typically 0.7nC, supporting fast switching speeds.

Feature Summary

Dual P-channel configuration in a compact SOT563 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

DC-DC converters
Load switches
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications. Ensure compatibility with IATF 16949 certified manufacturing standards during the sourcing process.

Selection Notes

Select this component when a dual P-channel solution is required in a small footprint. The low gate threshold voltage facilitates drive from standard logic levels. Evaluate thermal performance against the specified junction-to-ambient resistance for the target PCB layout. Consider the total gate charge for high-frequency switching efficiency requirements.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring compact packaging and robust electrical characteristics.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional equivalence.

FAQ

Is the DMP2900UVQ suitable for automotive applications?

Yes, the DMP2900UVQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.