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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2523-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.04W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2523-6
- Package / Case：6-PowerUDFN
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Overview
The DMP3011SFK is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -10.7A at +25°C. The device offers a low on-state resistance of 12mΩ at VGS = -10V and 25mΩ at VGS = -4.5V. Packaged in a U-DFN2523-6 surface-mount footprint, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
- Features ESD protected gate structure and low input/output leakage characteristics.
- Constructed using lead-free materials that are fully RoHS compliant and free of halogens and antimony.
Applications
- Load switches
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a 3,000-unit tape and reel carrier, while the -13 suffix denotes a 10,000-unit tape and reel carrier. Confirm package type and packing quantity requirements against the datasheet ordering information before placing orders to ensure correct component delivery.
Selection Notes
Select this component for applications requiring a compact P-Channel MOSFET with low on-resistance. Ensure the gate drive voltage meets the threshold requirements for the desired current load. Verify thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet for the intended PCB layout.
Part Context
This part belongs to the DMP3011 series of P-Channel Enhancement Mode MOSFETs. It utilizes the U-DFN2523-6 package, which provides a small form factor suitable for space-constrained designs. The device is designed to balance low conduction losses with efficient switching speeds for modern power management circuits.
Replacement Considerations
Public confirmed substitute part numbers: DMP3011SFV-7, DMP3011SFV-13.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is -80A, based on a 10µs pulse duration with a 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or qualification to AEC-Q100/101/104/200 standards, customers must contact Diodes Incorporated directly.
