DMP3013SFK-7

$0.87

Description：MOSFET P-CH 30V DFN2523-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:81821f54fd67 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V DFN2523-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2523-6
Package / Case：6-PowerUDFN

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DMP3013SFK-7

Overview

The DMP3013SFK-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a U-DFN2523-6 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current of -10.5A at +25°C with VGS = -10V. The device exhibits a static drain-source on-resistance (RDS(ON)) of 14mΩ max at VGS = -10V and 25mΩ max at VGS = -4.5V. Total gate charge is 33.7nC at VGS = -10V. Thermal resistance from junction to case is 6.4°C/W.

Feature Summary

Low on-resistance for high-efficiency power management
ESD protected gate structure
100% unclamped inductive switching tested in production
Totally lead-free and fully RoHS compliant

Applications

Load Switch
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets all applicable environmental directives, including RoHS and halogen-free requirements, prior to integration into final designs.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with low conduction losses. Evaluate thermal performance based on the specified junction-to-case resistance and ensure gate drive voltages align with the threshold characteristics for optimal switching efficiency.

Part Context

This part belongs to the DMP series of P-channel MOSFETs designed for minimizing on-state resistance while maintaining superior switching performance. It utilizes a U-DFN2523-6 case material classified as UL 94V-0 flammability rating, suitable for space-constrained PCB layouts.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Ensure any replacement maintains compatibility with the U-DFN2523-6 footprint and matches critical electrical parameters such as BVDSS and RDS(ON).