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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1142 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP3027LFDF-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -8.5A at +25°C. The device offers a low on-resistance (RDS(ON)) of 25mΩ at VGS = -10V and 38mΩ at VGS = -4.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -1.2V to -2.4V, total gate charge (Qg) of 21.8nC at VGS = -10V, and a power dissipation capability of 1.4W on FR-4 substrate. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-resistance design for high-efficiency power management
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device packaging
Applications
- General-purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration as defined in the manufacturer's ordering information. Confirm that the U-DFN2020-6 (Type F) package dimensions match the target PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications. The U-DFN2020-6 package provides a small footprint suitable for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values for the intended copper pad layout and operating environment.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. The product utilizes silicon technology and is manufactured in facilities certified under IATF 16949 standards, ensuring quality control for automotive and industrial applications.
Replacement Considerations
Consult the manufacturer for qualified automotive-grade alternatives if AEC-Q100/101 qualification or PPAP capability is required for the specific application environment.
