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The DMP3056LVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -30 V and a continuous drain current (Id) of -4.3 A at +25°C. The device exhibits a maximum on-resistance (Rds(on)) of 70 mΩ at Vgs = -4.5 V and 50 mΩ at Vgs = -10 V. Total gate charge (Qg) reaches 11.8 nC at Vgs = -10 V, with an input capacitance (Ciss) of 642 pF. Power dissipation is rated at 1.38 W, operating within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.
Select this component when a compact SOT23 package is required for P-channel switching. Ensure the application voltage does not exceed the -30 V rating and consider thermal resistance characteristics for heat dissipation in space-constrained designs.
This part belongs to the DMP3056L series of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The standard version utilizes a SOT23 case, providing a compact solution for surface-mount assembly in portable and industrial electronics.
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pin configurations and electrical ratings carefully to ensure functional compatibility without modifying existing circuit layouts.