DMP3065LVT-7

$0.38

Description：MOSFET P-CH 30V 4.9A TSOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:47851810c784 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 4.9A TSOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：587 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3065LVT-7

Overview

The DMP3065LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of -5.1A at VGS = -10V and -4.0A at VGS = -4.5V. Static drain-source on-resistance is specified as 42mΩ max at VGS = -10V and 65mΩ max at VGS = -4.5V. Total power dissipation reaches 1.6W under standard mounting conditions.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features an ESD protected gate structure for enhanced reliability.
Qualified to AEC-Q101 standards for automotive-grade high reliability.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a tape and reel packaging format containing 3,000 units per reel. Confirm that the required package type matches the TSOT26 form factor. Ensure the component meets the necessary environmental compliance standards for the target assembly process.

Selection Notes

Select this component for designs requiring low on-resistance in a compact surface-mount package. Evaluate thermal performance based on the specific PCB copper area and ambient temperature conditions. Consider the gate threshold voltage requirements to ensure compatibility with the driving logic levels used in the circuit design.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TSOT26 case configuration designed for surface mount applications. The device is constructed using silicon technology and is intended for general-purpose switching and power management tasks.