DMP3105LVT-7

$0.37

Description：MOSFET P-CH 30V 3.1A TSOT23-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b7e297d51a28 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.1A TSOT23-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：75mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.8 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：839 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.15W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3105LVT-7

Overview

The DMP3105LVT-7 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 75mΩ at VGS = -10V with a continuous drain current of -3.9A, or 98mΩ at VGS = -4.5V with -3.3A. It utilizes a TSOT26 package and is qualified to AEC-Q101 standards.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability requirements.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a green device.

Applications

DC-DC Converters
Power Management Functions
Backlighting
Motor Control

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration when sourcing components. Confirm that the TSOT26 package dimensions align with the target PCB footprint layout. Ensure compliance with moisture sensitivity level 1 per J-STD-020 during storage and handling procedures.

Selection Notes

Select this component for designs requiring low input capacitance and fast switching speeds in compact form factors. Evaluate thermal resistance parameters against the expected ambient operating conditions to ensure safe operation within the specified junction temperature limits. Consider gate threshold voltage characteristics for compatibility with available drive logic levels.

Part Context

This part belongs to the DMP3105 series of P-channel MOSFETs from Diodes Incorporated. It represents a newer generation design optimized to balance low on-resistance with efficient switching capabilities. The device is intended for use in modern electronic systems where space constraints and energy efficiency are critical design drivers.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.