DMP31D0U-7

$0.34

Description：MOSFET P-CH 30V 530MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76e50c0fb2a4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 530MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：450mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP31D0U-7

Overview

The DMP31D0U is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT23 package. It features a maximum drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.67A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 1Ω at VGS = -4.5V, 1.5Ω at VGS = -2.5V, and 2Ω at VGS = -1.8V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features low gate threshold voltage and fast switching speed capabilities.
Includes ESD protection on the gate terminal.

Applications

Load Switch in Portable Electronics

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the intended application environment.

Selection Notes

Select this component for portable electronics requiring a compact P-channel switch. Ensure the driving circuit provides sufficient gate-source voltage to achieve the desired RDS(ON) level. Verify thermal dissipation limits based on the PCB copper coverage and ambient operating conditions.

Part Context

This part belongs to the family of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a standard SOT23 surface-mount case style with molded plastic construction. The terminals are finished with matte tin annealed over a copper leadframe.