DMP31D1U-7

Overview

The DMP31D1U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of -30 V and a gate-source voltage (VGSS) rating of ±8 V. The device supports a continuous drain current (ID) of -0.62 A at +25°C, with a pulsed drain current (IDM) capability of -2 A. Static drain-source on-resistance (RDS(ON)) ranges from 0.6 Ω to 2 Ω depending on the gate drive voltage (-4.5 V to -1.8 V). Total power dissipation (PD) is rated at 0.46 W to 0.58 W. Operating and storage temperatures span from -55°C to +150°C.

Feature Summary

• Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
• Features an ESD protected gate structure to enhance reliability during handling and operation.
• Compliant with RoHS directives and halogen/antimony-free manufacturing standards.

Applications

• Load switches in portable electronics

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable regulatory requirements for your target market. Ensure proper handling procedures are followed due to the ESD sensitive nature of the gate terminal. Validate thermal management strategies based on the specified junction-to-ambient thermal resistance values under your specific board layout conditions.

Selection Notes

Select this component when a compact SOT-23 package is required for low-voltage P-channel switching applications. Evaluate the RDS(ON) specifications relative to your expected load current and available gate drive voltage levels. Consider the total gate charge and switching times if high-frequency operation is necessary. Verify that the -30 V breakdown voltage provides adequate margin for your system's supply rails.

Part Context

This part belongs to the DMP31D1U series of P-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a standard SOT-23 surface-mount package. The device is designed to offer a balance between low conduction losses and fast switching speeds suitable for modern portable electronic designs.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent parts. Do not assume pin-compatible alternatives without verifying electrical parameters such as VDS, ID, and RDS(ON).

FAQ

What is the typical turn-on rise time for the DMP31D1U?

The typical turn-on rise time (tR) is 11 ns, measured under conditions of VDD = -10V, RL = 10Ω, VGS = -4.5V, and RG = 6Ω.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (VGS(TH)) exhibits negative temperature dependence, decreasing as the junction temperature increases from -55°C to +150°C.