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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 119W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMP4016SPSWQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum on-resistance of 10mΩ at VGS = -10V, supporting a continuous drain current of -86A at +25°C case temperature. The device utilizes a PowerDI5060-8/SWP package with wettable flanks for improved optical inspection. It is qualified to AEC-Q101 standards and supports PPAP requirements.
Feature Summary
- Designed for automotive applications requiring specific change control
- Features wettable flank technology for enhanced optical inspections
- Includes 100% Unclamped Inductive Switch (UIS) testing in production
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the complete part number including the -13 suffix to confirm tape and reel packaging quantities. Confirm that the specified PowerDI5060-8/SWP package variant matches your board layout requirements. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing process.
Selection Notes
Select this component when a low on-resistance P-channel MOSFET is needed for high-current switching applications. The AEC-Q101 qualification makes it suitable for automotive environments. Consider the thermal resistance characteristics and the specific gate threshold voltage requirements for your drive circuit design.
Part Context
This component belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is designed to meet stringent automotive reliability standards. The PowerDI5060-8 package provides a compact footprint with robust thermal performance, suitable for space-constrained designs.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar -40V ratings and comparable RDS(ON) values. Verify pinout compatibility and package dimensions before substitution. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.
