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Product Detailed Parameters
- Description：MOSFET P-CH 450V 4.6A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.9Ohm @ 1.05A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.7 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：547 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The DMP45H4D9HJ3 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO251 (Type TH) package. It features a drain-source voltage of -450V and a continuous drain current of -4.6A at +25°C. The maximum on-resistance is 4.9Ω at VGS = -10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
- Features low input capacitance and low input/output leakage characteristics.
Applications
- Motor Control
- DC-DC Converters
- Power Management Functions
- Uninterrupted Power Supply
Procurement Notes
Verify the specific ordering suffix 'HJ3' against official Diodes Incorporated documentation to confirm packaging details, as standard suffixes may indicate different quantities or reel specifications. Ensure compliance with RoHS and halogen-free requirements if specified for your application.
Selection Notes
Select this component for designs requiring high-voltage P-channel switching capabilities. Evaluate thermal dissipation needs based on the 104W power rating at +25°C case temperature. Confirm gate drive voltages align with the -10V threshold for optimal on-resistance performance.
Part Context
This device belongs to the DMP45H series of 450V P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a TO251 surface-mount package designed for efficient heat dissipation and reliable operation in various power electronics environments.
Replacement Considerations
Public confirmed substitute part numbers: DMP45H21DHE, DMP45H4D9HK3.
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy rating is 187 mJ when tested with an inductance of 60mH.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, contact Diodes Incorporated directly.
