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The DMP6023LE-13 is a 60V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an SOT223 package and is designed for high-efficiency power management applications. Key electrical parameters include a drain-source breakdown voltage of -60V, a maximum continuous drain current of -7A at +25°C, and a static drain-source on-resistance of 28mΩ at VGS = -10V. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance and halogen-free specifications as defined by the manufacturer's green product guidelines. Ensure the sourcing channel is authorized to guarantee authenticity and adherence to quality standards.
Select this component when a 60V P-channel MOSFET with low on-resistance is required for compact designs. The SOT223 package provides a balance between thermal performance and board space. Consider the -7A continuous current rating and the specific gate threshold characteristics for compatibility with the intended control logic levels in the target application circuit.
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions, offering robust performance across various industrial and consumer electronic applications requiring reliable power switching.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering any alternative components from other manufacturers.
The maximum continuous drain current (ID) at an ambient temperature of +25°C is -7A.
Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications.
The typical total gate charge (Qg) at VGS = -4.5V is 26.5nC.