DMPH33M8SPSW-13

$0.64

Description：MOSFET BVDSS: 25V~30V PowerDI506
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:8a48a3762df7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V PowerDI506
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：127 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3775 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type Q)
Package / Case：8-PowerTDFN

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DMPH33M8SPSW-13

Overview

The DMPH33M8SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 package with a maximum profile of 1.1mm. At VGS = -10V, the static drain-source on-resistance (RDS(ON)) is typically 2.4mΩ with a maximum of 3.8mΩ at ID = -20A. Continuous drain current reaches -100A at TC = +25°C. Total gate charge is typically 127nC.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Rated for operation in high ambient temperature environments up to +175°C.
Features a thermally efficient package designed for cooler running applications.
Manufactured as a lead-free, RoHS compliant, halogen and antimony free green device.

Applications

High efficiency power management circuits
Applications requiring operation in high ambient temperatures
Thin electronic designs necessitating low profile components

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets the required AEC-Q101 standards if intended for automotive use, as standard production may not include specific change control or PPAP capabilities without explicit manufacturer confirmation.

Selection Notes

Select this component when a P-channel MOSFET with a -30V rating and ultra-low RDS(ON) is required. Ensure the design accommodates the -10V gate drive requirement for optimal conduction characteristics. Verify that the PCB layout supports the exposed drain pad thermal dissipation requirements specified in the datasheet notes.

Part Context

This part belongs to the Diodes Incorporated PowerDI family, utilizing the 5060-8 footprint. It is an advanced information product released in November 2021. The device is distinct from N-channel variants and other voltage ratings within the same package series.