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The DMPH6023SK3Q is a P-channel enhancement mode MOSFET rated for -60V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 33mΩ at VGS=-10V and 40mΩ at VGS=-4.5V, supporting continuous drain currents of -35A at TC=+25°C. The device includes avalanche energy ratings of 60mJ and total gate charge values of 53.1nC at VGS=-10V.
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by Diodes Incorporated. Ensure the design accommodates the TO252 (DPAK) package dimensions and thermal resistance characteristics specified in the datasheet.
Select this component when designing circuits requiring high-temperature reliability and automotive qualification. The low on-resistance supports efficient power switching in engine and body control modules. Verify that the gate drive voltage levels align with the threshold and on-resistance specifications provided for optimal performance.
This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package designed for efficient heat dissipation. The product line targets demanding automotive environments where high junction temperatures and ruggedness are critical operational parameters.
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on voltage or current ratings without verifying pinout and thermal characteristics.