DMPH6023SK3Q-13

DMPH6023SK3Q-13

$1.57
  • Description:MOSFET P-CHANNEL 60V 35A TO252
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f51286b5437a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CHANNEL 60V 35A TO252
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:33mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:53.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2569 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3.2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMPH6023SK3Q-13

Overview

The DMPH6023SK3Q is a P-channel enhancement mode MOSFET rated for -60V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 33mΩ at VGS=-10V and 40mΩ at VGS=-4.5V, supporting continuous drain currents of -35A at TC=+25°C. The device includes avalanche energy ratings of 60mJ and total gate charge values of 53.1nC at VGS=-10V.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive applications
  • Rated for operation in high ambient temperature environments up to +175°C
  • Features 100% unclamped inductive switching testing for robust end applications

Applications

  • Engine management systems
  • Body control electronics
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by Diodes Incorporated. Ensure the design accommodates the TO252 (DPAK) package dimensions and thermal resistance characteristics specified in the datasheet.

Selection Notes

Select this component when designing circuits requiring high-temperature reliability and automotive qualification. The low on-resistance supports efficient power switching in engine and body control modules. Verify that the gate drive voltage levels align with the threshold and on-resistance specifications provided for optimal performance.

Part Context

This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package designed for efficient heat dissipation. The product line targets demanding automotive environments where high junction temperatures and ruggedness are critical operational parameters.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on voltage or current ratings without verifying pinout and thermal characteristics.

DMPH6023SK3Q-13DMPH6023SK3Q-13
$1.57
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