DMT10H003SPSW-13

$0.77

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:35de5155ee70 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：152A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5542 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type Q)
Package / Case：8-PowerTDFN

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DMT10H003SPSW-13

Overview

The DMT10H003SPSW is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 2.2mΩ at VGS=10V and ID=30A, with a maximum of 3mΩ under the same conditions. At VGS=6V and ID=25A, RDS(ON) is typically 3.4mΩ with a maximum of 5mΩ. Continuous drain current (ID) reaches 152A at TC=+25°C and 121A at TC=+70°C. Pulsed drain current (IDM) is rated at 608A. Total power dissipation (PD) is 139W at TC=+25°C. Thermal resistance from junction to case (RθJC) is 0.9°C/W.

Feature Summary

Engineered for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features wettable flank technology in the PowerDI5060-8 package to improve optical inspection reliability during manufacturing.
Subjected to 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component utilizes the PowerDI5060-8 (SWP) Type Q package variant. Ensure compliance requirements such as RoHS, Halogen-free, and Antimony-free status are validated against the manufacturer's quality definitions before procurement.

Selection Notes

Select this component when designing circuits requiring a 100V N-channel MOSFET with low conduction losses. The device supports continuous currents up to 152A at case temperatures of +25°C. Consider the thermal resistance characteristics and the specific RDS(ON) values at VGS=10V and VGS=6V to match gate drive capabilities. Verify that the operating temperature range of -55°C to +150°C aligns with the system environment.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in the PowerDI5060-8 surface-mount package, which provides a compact footprint suitable for dense PCB layouts. The product is designed to meet automotive quality standards, with options available for AEC-Q100 qualification and IATF 16949 manufacturing facilities upon request.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers within the same family or equivalent specifications. Cross-referencing should be performed based on voltage ratings, current capacity, and package dimensions to ensure mechanical and electrical compatibility.