DMT10H015LCG-13

Overview

The DMT10H015LCG-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) case with a maximum drain-source voltage of 100V and a gate-source voltage rating of ±20V. The device provides a continuous drain current of 9.4A at an ambient temperature of +25°C, increasing to 34A at a case temperature of +25°C. The static drain-source on-resistance is specified as a maximum of 15mΩ at VGS=10V and ID=20A, or 19.5mΩ at VGS=6V and ID=20A. Total power dissipation reaches 2.1W when mounted on a copper plate, with a thermal resistance junction-to-case of 4.5°C/W.

Feature Summary

• Designed to minimize on-state losses while maintaining superior switching performance through low input capacitance and fast switching speed.
• Manufactured using totally lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.
• Undergoes 100% unclamped inductive switching (UIS) testing during production to ensure reliability.

Applications

• Notebook battery power management
• Load switch circuits
• Backlighting systems
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration for the V-DFN3333-8 case type. Confirm compliance requirements against EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure procurement channels are authorized to maintain product integrity and warranty coverage.

Selection Notes

Select this component for applications requiring a balance between low conduction losses and high switching efficiency within a compact surface-mount footprint. Evaluate the thermal resistance parameters against the specific PCB copper area available for heat dissipation. Consider the gate threshold voltage characteristics relative to the driving logic levels to ensure reliable turn-on across the intended operating temperature range.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series utilizes the PowerDI family of packages designed for high-current density and efficient thermal management. The DMT10H015LCG variant specifically targets 100V applications where minimizing on-resistance is critical for system efficiency.

Replacement Considerations

The datasheet lists DMT10H015LCG-7 as a packaging alternative offering identical electrical specifications but supplied in a 2,000-unit tape and reel format instead of the 3,000-unit configuration.

FAQ

What is the maximum avalanche energy rating for this device?

The maximum avalanche energy (EAS) is rated at 85 mJ when tested with an inductance of 3mH.

How does the on-resistance vary with junction temperature?

The on-resistance increases as the junction temperature rises. Typical curves show normalized resistance variation from -55°C up to +150°C under various gate drive voltages.