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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1639 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 12.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT10H025LSS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 7.1A at +25°C. The device offers low on-state resistance, with RDS(ON) values of 25mΩ at VGS=10V, 33mΩ at VGS=6V, and 45mΩ at VGS=4.5V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- High conversion efficiency through minimized on-state resistance
- Superior switching performance suitable for high-frequency applications
- 100% unclamped inductive switching capability for robust operation
Applications
- High frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration as documented. Confirm that the component meets RoHS compliance standards and halogen-free requirements if mandated by project specifications. Ensure the SO-8 package dimensions align with the target PCB footprint layout.
Selection Notes
Select this component for power management designs requiring a balance between low conduction losses and fast switching speeds. Evaluate the thermal resistance characteristics against the expected ambient temperature and duty cycle. Consider the gate threshold voltage range when designing the drive circuitry to ensure reliable turn-on across varying load conditions.
Part Context
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 surface-mount package. The device is designed to provide high reliability in compact power electronics applications where efficient heat dissipation and low profile are critical design constraints.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be limited to components explicitly listed as equivalents or direct replacements within the manufacturer's portfolio.
