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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT10H032LSS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a gate-source voltage (VGSS) rating of ±20V. The device offers a static drain-source on-resistance (RDS(on)) of 32mΩ at VGS=10V and 49mΩ at VGS=4.5V. Continuous drain current (ID) is rated at 5A at +25°C and 4A at +70°C, with a pulsed drain current (IDM) of 42A. Total power dissipation (PD) reaches 1.9W on an FR-4 substrate with a 1-inch square copper plate. Thermal resistance junction-to-case (RθJC) is 11°C/W.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features low input capacitance and fast switching speed to support high-frequency applications.
- Includes 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.
Applications
- High frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the SO-8 package packed in tape and reel carriers with a quantity of 2500 units. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the procurement channel is authorized to guarantee standard terms and conditions apply.
Selection Notes
Select this component when a 100V N-channel MOSFET with low RDS(on) is required for synchronous rectification or DC-DC conversion. Consider the thermal characteristics, specifically the 11°C/W junction-to-case resistance, for heat dissipation planning. Verify that the gate threshold voltage range aligns with the driving circuit requirements.
Part Context
This part belongs to the DMT10H032LSS series from Diodes Incorporated. It utilizes an SO-8 surface-mount package constructed with molded plastic and matte tin annealed over a copper leadframe. The device is designed for operation within a temperature range of -55°C to +150°C.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pin configurations and thermal specifications.
FAQ
What is the maximum continuous body diode forward current?
The maximum continuous body diode forward current (IS) is 25A.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not include these specific change controls.
