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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H9M9SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 10 A. Its maximum on-resistance (Rds(on)) is specified at 9 mΩ. The gate-source voltage range is ±20 V, with a typical threshold voltage of approximately 2 V. Total gate charge is 4.5 nC. The component supports a power dissipation of 37.8 W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-performance N-channel MOSFET optimized for low on-resistance applications
- Robust thermal management capabilities via the PowerDI5060-8 package design
- Fast switching characteristics suitable for high-frequency power conversion
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before integration. Confirm that the PowerDI5060-8 footprint matches the target PCB layout requirements. Ensure compliance with RoHS and REACH standards as indicated in the product specifications. Cross-reference the part number suffix to confirm tape-and-reel packaging details.
Selection Notes
Select this component when a compact N-channel MOSFET with 100 V rating and low Rds(on) is required. The PowerDI5060-8 package offers a balance between current handling and board space efficiency. Consider the 10 A continuous current limit and thermal dissipation constraints for the specific application environment. Verify gate drive compatibility with the specified threshold voltage levels.
Part Context
This component belongs to the DMTH/DMT series of MOSFETs from Diodes Incorporated, designed for general-purpose power switching. The PowerDI family provides leadless thermal pads for improved heat transfer compared to traditional packages. This specific model targets applications requiring efficient power conversion in limited spaces.
Replacement Considerations
Direct substitutes must match the 100 V Vds, 10 A Id, and PowerDI5060-8 package. Check equivalent Rds(on) values and thermal resistance parameters. Verify pinout compatibility if substituting with different manufacturers' offerings.
