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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8.5A 8VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
- Power - Max：670mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：V-DFN3030-8 (Type K)
- Grade：-
- Qualification：-
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Overview
The DMT3020LDT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 (Type K) package with a drain-source voltage of 30V and a gate-source voltage rating of ±20V. The device provides a maximum continuous drain current of 8.5A at +25°C case temperature, reducing to 7.0A at +70°C. On-resistance is specified as 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. Total gate charge is 7.0nC at VGS=10V. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact surface-mount package
- Optimized for low on-state resistance while maintaining superior switching performance
- Low gate threshold voltage design facilitates efficient drive requirements
- Totally lead-free construction fully compliant with RoHS directives
Applications
- General purpose interfacing switch applications
- Power management functions in electronic circuits
- High efficiency power management systems requiring low conduction loss
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 1,500 units per tape and reel packaging format. Confirm that the component utilizes the V-DFN3030-8 (Type K) case style. Ensure procurement channels are authorized to maintain product integrity and traceability standards required for this semiconductor category.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. Evaluate thermal constraints carefully, as power dissipation varies significantly between ambient and case-mounted conditions. Verify that the 30V breakdown voltage aligns with the system's maximum operating limits and transient spikes.
Part Context
This part belongs to the DMT3020 series of advanced MOSFETs designed for high-efficiency applications. It represents a generation of devices focused on minimizing on-state resistance without compromising switching speed. The series targets general-purpose switching and power management roles where space and thermal efficiency are critical design parameters.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs in the V-DFN3030-8 package. Verify matching electrical characteristics, specifically the 30V rating and on-resistance values. Ensure pinout compatibility and thermal resistance specifications align with the existing board layout and cooling strategy.
