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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 16A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT3020LSDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 30V drain-source voltage rating and low on-resistance of 20mΩ at VGS=10V, supporting up to 16A continuous drain current. The device operates within a -55°C to +150°C junction temperature range and utilizes an SO-8 package.
Feature Summary
- Dual N-channel configuration in a compact SO-8 package
- Qualified to AEC-Q101 standards with PPAP capability
- Low gate threshold voltage for efficient switching
- 100% unclamped inductive switching (UIS) tested
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS41746 Rev. 5-2. Confirm that the marking code matches T3020LD and the suffix indicates tape and reel packaging. Ensure compliance with RoHS and IATF 16949 manufacturing requirements for automotive use.
Selection Notes
Select this component for designs requiring robust automotive-grade performance with low conduction losses. The dual configuration allows for space-efficient implementation in power stages. Verify thermal dissipation capabilities based on the specific PCB copper area and ambient conditions.
Part Context
This part belongs to Diodes Incorporated's advanced MOSFET portfolio tailored for high-reliability environments. It integrates isolated DMOS technology with CMOS control logic to optimize performance while maintaining compatibility with standard driver interfaces.
Replacement Considerations
Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(ON), BVDSS, and package dimensions before implementing any alternative components.
FAQ
Is the DMT3020LSDQ-13 suitable for harsh automotive environments?
Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.
What is the maximum operating junction temperature?
The device supports a junction temperature range from -55°C to +150°C.
Does the component support unclamped inductive switching?
Yes, 100% of production units undergo unclamped inductive switching (UIS) testing.
