DMT32M5LFG-13

$1.45

Description：MOSFET N-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4d46cb38214e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4066 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMT32M5LFG-13

Overview

The DMT32M5LFG-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 1.7mΩ at VGS=10V and 2.8mΩ at VGS=4.5V, supporting a continuous drain current of 100A at TC=+25°C. The device has a gate threshold voltage ranging from 1V to 3V and a total gate charge of 67.7nC at VGS=10V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Advanced technology designed for high-efficiency power management applications with minimized on-state losses.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
100% UIS (Avalanche) rated.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by Diodes Incorporated standards. Ensure the selected part number matches the required package type and electrical specifications for the intended application design.

Selection Notes

Select this component for designs requiring low RDS(ON) and excellent switching performance in compact layouts. Consider the thermal resistance characteristics when determining heat dissipation requirements. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching speeds and efficiency in the target circuit topology.

Part Context

This component belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package, which provides a small footprint suitable for space-constrained PCB designs. The series is engineered to balance low conduction losses with robust switching capabilities for modern power electronics.