DMT4002LPS-13

$1.82

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6ecc2a2a1cee Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：116.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6771 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMT4002LPS-13

Overview

The DMT4002LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 100A at a case temperature of +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 1.8mΩ at VGS = 10V and 3.1mΩ at VGS = 4.5V, both tested at ID = 25A. Total gate charge (Qg) is 116.1nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Engineered for high efficiency power management with minimized on-state resistance and superior switching performance.
Includes 100% unclamped inductive switching capability to ensure robust end-application reliability.
Features a thermally efficient package profile under 1.1mm, suitable for thin applications.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for 40V systems demanding high current handling up to 100A. Evaluate the RDS(ON) specifications against the intended gate drive voltage, noting the difference between 10V and 4.5V operation. Consider the PowerDI5060-8 package dimensions for PCB layout constraints and verify thermal dissipation requirements against the junction-to-case thermal resistance.

Part Context

This part belongs to the DMTH/DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 (Type K) package form factor with other devices in the lineup but is distinguished by its specific 40V breakdown voltage and 100A current rating capabilities designed for compact power management solutions.

Replacement Considerations

Consult the official Diodes Incorporated cross-reference documentation or contact the manufacturer directly for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic parameter ranges without explicit manufacturer confirmation.