ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 22A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：96.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4515 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 105W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMT6004LPS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 100A at case temperature +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 3.1mΩ at VGS = 10V and 4.5mΩ at VGS = 4.5V. Total gate charge (Qg) is typically 78.3nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI5060-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features 100% unclamped inductive switching testing to ensure robust end-application reliability.
- Low gate charge characteristics minimize switching losses during operation.
- Qualified to JEDEC standards for high reliability and compliant with RoHS directives.
Applications
- Primary switches in isolated DC-DC converters
- Synchronous rectifiers
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets the necessary environmental compliance requirements, specifically RoHS and halogen-free specifications, for the intended manufacturing process. Ensure the selected variant matches the exact PowerDI5060-8 pin configuration needed for the PCB layout.
Selection Notes
Select this component when a 60V rating and high current handling capability are required in a compact surface-mount form factor. Consider the thermal resistance values and power dissipation limits relative to the expected operating environment. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure efficient switching transitions and proper logic level compatibility.
Part Context
This part belongs to the DMTH6004 series of N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members of the family but may differ in specific packaging options or automotive qualification status. The standard version is designed for general-purpose high-reliability applications rather than specific automotive change control requirements.
Replacement Considerations
Direct substitutes include DMT6004SPS-13 and DMTH6004LPS-13. Verify pinout compatibility and thermal performance differences before substitution. Automotive-grade alternatives require the Q-suffix designation if AEC-Q100 qualification is mandatory.
FAQ
What is the maximum pulsed drain current for the DMT6004LPS?
The maximum pulsed drain current (IDM) is 400A, specified with a 10µs pulse duration and a duty cycle of 1%.
Is the DMT6004LPS qualified for automotive applications?
No, this specific part number is not qualified to AEC-Q100/101/104/200 standards. For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix.
What is the body diode reverse recovery time?
The body diode reverse recovery time (tRR) is typically 49.7ns, measured with an forward current of 25A and a rate of change of current (dI/dt) of 100A/µs.
