DMT6008LFG-7

$0.89

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d6352ecc7a99 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2713 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT6008LFG-7

Overview

The DMT6008LFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (VDSS) of 60V and a maximum continuous drain current (ID) of 60A at TC=+25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 7.5mΩ max at VGS=10V and 11.5mΩ max at VGS=4.5V. Total gate charge (Qg) is 50.4nC typ at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Rated for 100% Unclamped Inductive Switching (UIS) with avalanche energy capability and includes ESD protected gate structures.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, as variations exist between tape and reel quantities. Ensure compliance requirements such as RoHS and halogen-free status are confirmed through manufacturer quality definitions. Cross-reference datasheet revision numbers to validate electrical characteristics and thermal parameters before finalizing procurement specifications.

Selection Notes

Select this component when a compact footprint is required alongside high current handling capabilities in low-voltage applications. Evaluate the trade-off between the low RDS(ON) values at different gate drive voltages and the resulting switching losses. Consider the thermal resistance characteristics relative to the intended PCB copper layout to ensure adequate heat dissipation under continuous load conditions.

Part Context

This part belongs to the DMT series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the proprietary PowerDI3333-8 case style, which provides a leadless, thermally enhanced surface mount solution. The series is engineered for modern power management circuits requiring reduced board space without compromising electrical performance or reliability standards.

Replacement Considerations

Consult official substitution guides for verified alternatives within the same voltage and current ratings. Ensure any replacement maintains compatibility with the PowerDI3333-8 footprint and meets the required AEC-Q101 qualification if automotive reliability is necessary.