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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：785 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta), 11W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT6012LFDF-13 is a 60V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) of ±20V. The static drain-source on-resistance (RDS(ON)) is 14mΩ max at VGS=10V and 21mΩ max at VGS=4.5V. Continuous drain current (ID) is 9.5A at TA=+25°C. Pulsed drain current (IDM) reaches 60A. Avalanche energy (EAS) is 7.9mJ with L=0.1mH. Total gate charge (Qg) is 13.6nC at VGS=10V. Operating junction temperature range is -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for reliability
- Low profile 0.6mm case height suitable for space-constrained designs
- Totally lead-free, RoHS compliant, and halogen/antimony free construction
Applications
- DC-DC Converters
- Adaptor Switches
- Wireless Charging Systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per reel as documented in the manufacturer's ordering information. Confirm that the U-DFN2020-6 (Type F) package dimensions and pinout match the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 handling procedures during assembly to prevent damage during soldering processes.
Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required for 60V applications with strict height constraints. The U-DFN2020-6 package offers a small PCB footprint ideal for dense layouts. Consider the thermal resistance values and power dissipation limits relative to the expected operating ambient temperature and copper area available on the printed circuit board for adequate heat sinking.
Part Context
This device belongs to Diodes Incorporated's new generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is part of the DMT series, utilizing a molded plastic green molding compound with UL flammability classification rating 94V-0. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-202 standards.
Replacement Considerations
Check datasheets for alternative 60V N-channel MOSFETs in U-DFN2020-6 packages. Verify matching RDS(ON), BVDSS, and thermal characteristics before substitution. Ensure pin compatibility and package outline dimensions are identical to avoid PCB redesign.
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy (EAS) is 7.9 mJ when tested with an inductance of 0.1 mH.
Is this component suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific controls.
