DMT6016LSS-13

$0.59

Description：MOSFET N-CH 60V 9.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bb8ac46cc271 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 9.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT6016LSS-13

Overview

The DMT6016LSS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 9.2A at 25°C with VGS=10V. The device offers a low on-resistance of 18mΩ at VGS=10V and 28mΩ at VGS=4.5V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C and includes a total power dissipation rating of 1.5W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
Halogen and antimony free construction classifies the device as a 'Green' product.

Applications

Load Switch
Adaptor Switch
Notebook PC

Procurement Notes

Verify that the specific part number matches the required package type and electrical ratings before procurement. Confirm compliance requirements such as RoHS and Halogen-free status align with project specifications. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when a 60V N-channel MOSFET with low on-resistance is required for power management circuits. Consider the SO-8 package constraints and thermal resistance values for heat dissipation. Evaluate gate threshold voltage and drive requirements to ensure compatibility with control logic levels.

Part Context

This component belongs to the DMT6016 series of N-channel enhancement mode MOSFETs. It is designed for general-purpose power switching applications requiring low conduction losses. The device utilizes silicon technology and is housed in a standard surface-mount plastic package suitable for automated assembly processes.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching voltage, current, and resistance specifications precisely.