DMT68M8LPS-13

$0.94

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:91830d324413 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：14.1A (Ta), 69.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2078 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 56.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT68M8LPS-13

Overview

The DMT68M8LPS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP packaging and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 60V, a continuous drain current (ID) of 69.2A at TC=+25°C, and a maximum static drain-source on-resistance (RDS(ON)) of 7.9mΩ at VGS=10V. The device features a gate threshold voltage (VGS(TH)) between 1V and 3V, total gate charge (Qg) of 30nC at VGS=10V, turn-on delay time of 5.2ns, and turn-off fall time of 8.9ns.

Feature Summary

Features 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.
Designed with low input capacitance and fast switching speed for high-efficiency power management.
Includes an ESD protected gate structure.

Applications

Synchronous rectifiers
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and packing quantity. Confirm RoHS compliance status and environmental declarations directly from the manufacturer's datasheet or product definitions page before procurement.

Selection Notes

Select this component based on its 60V rating and low RDS(ON) characteristics suitable for high-current applications. Ensure thermal management aligns with the specified junction-to-case thermal resistance. Verify that the required gate drive voltage meets the threshold specifications for optimal conduction.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a lead-free PowerDI5060-8 package utilizing a molded plastic green molding compound.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pin configurations, electrical ratings, and package dimensions carefully when evaluating potential replacement components.