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Product Detailed Parameters
- Description：MOSFET N-CH 60V 45A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT69M8LFV-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage of 60 V and a continuous drain current of 45 A at case temperature +25°C. The maximum on-resistance is 9.5 mΩ at VGS = 10V and 13.3 mΩ at VGS = 4.5V. Total gate charge is 33.5 nC at VGS = 10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- 100% unclamped inductive switching capability for robust end applications
- Low on-resistance and low input capacitance design
- Totally lead-free and fully RoHS compliant construction
Applications
- Power management functions
- DC-DC converters
- Synchronous rectifier circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen/antimony-free specifications, as defined by the manufacturer's green product guidelines before finalizing procurement.
Selection Notes
Select this component for high-efficiency power management designs requiring low conduction losses. Ensure the application operates within the specified thermal limits, considering the thermal resistance values provided. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance characteristics for the intended load current.
Part Context
This device belongs to the DMTH series of N-channel MOSFETs designed for compact power solutions. It utilizes the PowerDI3333-8 package to provide a small footprint while maintaining high current handling capabilities. The part is engineered to minimize on-state resistance without compromising switching performance.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-reference pinouts, thermal characteristics, and electrical ratings when evaluating alternative components.
