DMTH10H009LPSQ-13

$0.39

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b70c3abc1120 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H009LPSQ-13

Overview

The DMTH10H009LPSQ-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features an on-resistance of 8mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, supporting continuous drain currents of 91A at TC=+25°C and 73A at VGS=4.5V. The device operates from -55°C to +175°C, with a total power dissipation of 100W at TC=+25°C. Key electrical parameters include a gate threshold voltage of 1.2V to 2.5V, input capacitance of 2309pF, and total gate charge of 40.2nC at VGS=10V.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Manufactured in IATF 16949 certified facilities with AEC-Q101 qualification and PPAP capability.
Features a thermally efficient PowerDI5060-8 package with a profile under 1.1mm.
Undergoes 100% unclamped inductive switching (UIS) testing in production.

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets the required automotive quality standards, including AEC-Q101 qualification and PPAP documentation, as these are critical for the intended application environment.

Selection Notes

Select this component when a low-profile, high-current N-channel MOSFET is required for automotive or industrial applications. The device offers robust thermal performance and high conversion efficiency. Ensure the design accommodates the specified gate drive voltages to achieve the desired on-resistance and current handling capabilities.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI® technology to provide a compact footprint while maintaining high thermal dissipation. The series is designed to meet stringent automotive reliability requirements through rigorous manufacturing controls.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers within the same family or equivalent specifications. Do not assume cross-compatibility without verifying pinout, thermal resistance, and electrical ratings against the original datasheet.