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Product Detailed Parameters
- Description：MOSFET N-CH 100V 108A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2592 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMTH10H010LCT is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 108A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 9.5mΩ at VGS = 10V and ID = 13A. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220AB through-hole package.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features low input capacitance and fast switching characteristics
- Qualified to AEC-Q101 standards for automotive reliability
- Lead-free finish with RoHS compliance and halogen/antimony-free construction
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix 'LCT' corresponds to the tube packaging configuration containing 50 pieces per tube as documented in the manufacturer's datasheet. Confirm that the component meets the required environmental standards, including RoHS 3 compliance and the specified halogen and antimony-free definitions provided by Diodes Incorporated before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a 100V N-channel MOSFET capable of handling high continuous currents in a through-hole format. Ensure the gate drive voltage supports the specified RDS(ON) performance metrics. Evaluate thermal management requirements against the junction-to-case thermal resistance to maintain safe operating temperatures under expected load conditions.
Part Context
This part belongs to the DMTH10 series of power MOSFETs from Diodes Incorporated. It is designed as a next-generation solution offering low on-resistance and rapid switching speeds. The device is intended for high-efficiency power management applications where robust performance and high reliability are critical design parameters.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before substituting.
