DMTH10H010LPS-13

$0.43

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7884716c9b75 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta), 98.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2592 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W, 125W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H010LPS-13

Overview

The DMTH10H010LPS-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (V_DSS) of 100 V and a maximum on-resistance (R_DS(ON)) of 8.6 mΩ at V_GS = 10 V and I_D = 13 A. The device supports a continuous drain current of 98.4 A at case temperature +25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1.4 V to 3 V, total gate charge of 53.7 nC, and input capacitance of 2592 pF.

Feature Summary

Qualified to AEC-Q101 standards for high reliability applications
Thermally efficient PowerDI5060-8 package with low profile under 1.1 mm
Low R_DS(ON) minimizes on-state power losses
Fast switching speed supported by low input capacitance

Applications

Motor Control
DC-DC Converters
Power Management
Notebook Battery Power Management
Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal limits for the PowerDI5060-8 case material.

Selection Notes

Select this component when a 100 V rating and low on-resistance are required in a compact surface-mount form factor. The device is suitable for designs needing operation up to +175°C junction temperature. Consider the thermal resistance values for heat dissipation calculations in steady-state and pulsed conditions. Verify compatibility with standard PCB pad layouts provided in the datasheet.

Part Context

This part belongs to the DMTH10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to balance low conduction losses with superior switching performance. The PowerDI5060-8 package provides a robust solution for space-constrained electronics requiring high current handling capabilities.

Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMTH10 series or similar PowerDI5060-8 packages. Verify pinout compatibility and ensure replacement devices meet or exceed the 100 V breakdown voltage and 8.6 mΩ on-resistance specifications.