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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4843 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H4M5LPS-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and operates with a junction temperature range of -55°C to +175°C. Key electrical parameters include a maximum drain-source voltage (VDSS) of 100V, a continuous drain current (ID) of 100A at case temperature (+25°C), and a static drain-source on-resistance (RDS(ON)) of 4.3mΩ at VGS=10V and ID=30A. The device features a gate threshold voltage (VGS(TH)) between 1.3V and 2.5V, total gate charge (QG) of 80nC, and input capacitance (CISS) of 4843pF.
Feature Summary
- Features 100% Unclamped Inductive Switching (UIS) testing in production for enhanced reliability.
- Designed to minimize RDS(ON) while maintaining superior switching performance.
- Utilizes a molded plastic 'Green' molding compound that is halogen and antimony free.
Applications
- Motor control
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard 2500-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS directives and REACH SVHC status against the latest manufacturer documentation before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high current handling up to 100A and low conduction losses indicated by the 4.3mΩ RDS(ON). Ensure thermal management strategies account for the specified thermal resistance values and the wide operating temperature range extending to +175°C.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power switching applications, offering a balance of low on-state resistance and fast switching speeds within the PowerDI5060-8 footprint.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameter alignment.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at 400A for a 10µs pulse duration with a 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 manufacturing, contact Diodes Incorporated directly.
