DMTH3004LFG-13

$0.14

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:22dfe40c4367 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH3004LFG-13

Overview

The DMTH3004LFG-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current of 75A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 5.5mΩ at VGS = 10V and 8.5mΩ at VGS = 4.5V. Packaged in a PowerDI3333-8 case, it supports a junction temperature range from -55°C to +175°C.

Feature Summary

Engineered for high-efficiency power management with minimized on-state losses
Small form factor thermally efficient package enabling higher-density end products
Occupies significantly less board area compared to SO-8 packages
Rated for 100% unclamped inductive switching (UIS)

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable RoHS and REACH compliance requirements before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require a compact footprint smaller than traditional SO-8 packages. Ensure the application operates within the specified 30V drain-source voltage limit and requires low conduction losses suitable for DC-DC conversion or automotive control electronics.

Part Context

This part belongs to the DMTH3004 series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 surface-mount package designed for thermal efficiency. The product line focuses on balancing low on-resistance with superior switching performance for modern electronic systems.