DMTH4005SK3-13

$0.82

Description：MOSFET N-CH 40V 95A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c711e439e849 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 95A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH4005SK3-13

Overview

The DMTH4005SK3-13 is a surface-mount N-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a drain-source voltage of 40V and a maximum on-resistance of 4.5mΩ at VGS=10V and ID=50A. The device supports a continuous drain current of 95A at TC=+25°C and a pulsed current of 150A. Total power dissipation reaches 100W at TC=+25°C. Operating temperature ranges from -55°C to +175°C, with gate-source voltage limits of ±20V.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Lead-free finish and halogen/antimony free construction

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for the target market. Ensure the selected part number aligns with the intended thermal management strategy and PCB layout specifications.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and robust switching performance. Consider the thermal characteristics and package limitations when designing for high ambient temperatures or continuous high-current loads. Verify compatibility with standard gate drive voltages.

Part Context

This part belongs to the DMTH4005 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a TO252 case. The product is designed to minimize power losses while maintaining superior switching capabilities suitable for demanding electronic environments.