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Product Detailed Parameters
- Description：MOSFET N-CH 40V 16.8A/70A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16.8A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH4007LK3Q is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 70A at TC = +25°C. The device offers a low on-resistance of 7.3mΩ at VGS = 10V and 9.8mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO252 (DPAK) package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Rated for operation up to +175°C junction temperature
- Low on-resistance minimizes conduction losses
- Fast switching speed supported by low input capacitance
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the complete part number includes the suffix '-13' for tape and reel packaging containing 2500 units per carrier. Confirm that the specific orderable part matches the required automotive qualification and IATF 16949 manufacturing facility requirements before procurement.
Selection Notes
Select this component when high ambient temperature tolerance is required due to its +175°C rating. Ensure the gate drive voltage supports the specified RDS(ON) performance at either 4.5V or 10V. Verify thermal management capabilities align with the specified junction-to-case resistance values.
Part Context
This device belongs to the DMTH4007LK3Q series from Diodes Incorporated, specifically engineered for robust automotive environments. It utilizes a silicon technology process optimized for low on-state resistance and fast switching characteristics within a standard surface-mount DPAK package.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Do not substitute based solely on generic electrical parameters without confirming package compatibility and automotive qualification status.
