DMTH4008LFDFWQ-7

$0.86

Description：MOSFET N-CH 40V 11.6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a0f5c18a912c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 11.6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：990mW (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (SWP) (Type F)
Package / Case：6-UDFN Exposed Pad

Download product information

DMTH4008LFDFWQ-7

Overview

The DMTH4008LFDFWQ-7 is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source on-resistance of 11.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, with continuous drain currents of 11.6A and 9.3A respectively. The device operates up to +175°C junction temperature, utilizes a U-DFN2020-6/SWP (Type F) package with a 0.6mm profile, and is qualified to AEC-Q101 standards.

Feature Summary

Rated to +175°C for high ambient temperature environments
100% unclamped inductive switching capability
Low RDS(ON) minimizes on-state losses
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix (-7, -13, -7R, or -13R) against your required packing quantity and carrier type before finalizing orders. Confirm that the component meets all applicable automotive quality requirements, including PPAP capability and IATF 16949 manufacturing certification, as these are critical for end-use validation.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance. Verify PCB layout constraints match the U-DFN2020-6 footprint dimensions and thermal pad requirements for adequate heat dissipation.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. These components are specifically engineered to meet stringent automotive reliability standards while offering compact form factors suitable for space-constrained designs.

Replacement Considerations

Consult official substitution lists from Diodes Incorporated for verified alternatives. Do not substitute with non-automotive grade parts without confirming AEC-Q101 qualification and PPAP compliance.