DMTH45M5SFVWQ-13

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fb443e3bdfd6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH45M5SFVWQ-13

Overview

The DMTH45M5SFVWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8/SWP package. It features a maximum on-resistance of 5.5mΩ at VGS=10V and supports continuous drain currents up to 71A at TC=25°C. The device operates within a temperature range of -55°C to +175°C, with a total power dissipation of 3.5W at TA=25°C. It includes an integrated body diode with a forward voltage of 1.2V max.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
Features wettable flanks for improved optical inspection
Manufactured in IATF 16949 certified facilities

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the PowerDI3333-8/SWP (Type UX) package variant matches the required footprint for the target PCB design. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet notes.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current switching applications. The 40V rating suits systems operating near standard battery voltages. Consider the thermal resistance characteristics and the necessity for AEC-Q101 qualification if deploying in automotive environments.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes silicon technology and is housed in a compact PowerDI® molded plastic package. The device is designed to minimize on-state losses while maintaining robust performance under high ambient temperatures.