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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 67.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 54.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH46M7SFVWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum on-resistance of 7.4mΩ at VGS=10V and ID=20A, with a continuous drain current of 67.2A at TC=+25°C. The device supports an operating junction temperature up to +175°C and includes wettable flank terminals for improved optical inspection.
Feature Summary
- Rated for high ambient temperatures with operation up to +175°C
- Features low on-state resistance to minimize conduction losses
- Includes wettable flank design for enhanced optical inspection reliability
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
Applications
- Motor controls
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP documentation, before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring robust thermal performance and high current handling within a compact surface-mount footprint. Ensure the gate drive voltage aligns with the specified 10V condition for optimal on-resistance performance and verify that the PCB layout accommodates the exposed drain pad for effective heat dissipation.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, designed specifically for environments demanding high reliability and stringent quality control. It utilizes the PowerDI3333-8 (SWP) package, which integrates wettable flank technology to support automated optical inspection processes commonly used in automotive manufacturing lines.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Cross-reference critical parameters such as BVDSS, RDS(ON), and package dimensions to ensure functional compatibility without compromising automotive qualification status.
