DMTH46M7SFVWQ-7

$0.86

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4397f94686fe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 67.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 54.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH46M7SFVWQ-7

Overview

The DMTH46M7SFVWQ is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 67.2A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance of 7.4mΩ maximum at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8 surface-mount package.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability, suitable for environments requiring specific change control.
Rated for operation up to +175°C junction temperature, designed for high ambient temperature conditions.
Includes 100% unclamped inductive switching (UIS) testing during production to ensure robust end-application reliability.
Features wettable flanks on the PowerDI3333-8 package to facilitate improved optical inspection.

Applications

Motor controls
Power management functions
DC-DC converters

Procurement Notes

Verify that the component matches the exact part number DMTH46M7SFVWQ-7 or DMTH46M7SFVWQ-13 to confirm the correct packing quantity and carrier type. Confirm AEC-Q101 qualification status and IATF 16949 manufacturing facility compliance if automotive grade requirements are mandatory. Ensure the ordering suffix aligns with the required tape and reel specifications.

Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for 40V systems operating under high thermal stress. The device supports high continuous current loads and offers excellent figure-of-merit performance. Verify that the PowerDI3333-8 package dimensions fit the target PCB layout and that the gate threshold voltage characteristics match the driving circuit requirements.

Part Context

This device belongs to the DMTH series of automotive-grade power MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards, including AEC-Q101 qualification and PPAP support. The product is manufactured in IATF 16949 certified facilities, ensuring consistent quality for demanding electronic applications.

Replacement Considerations

Public confirmed substitute part numbers: DMTH46M7SFVWQ-13.

FAQ

Is the DMTH46M7SFVWQ qualified for automotive use?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.