DMTH47M2LPSWQ-13

$0.96

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:26491f5c29a1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：891 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH47M2LPSWQ-13

Overview

The DMTH47M2LPSWQ-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 40V and a maximum on-resistance of 7.3mΩ at VGS=10V, supporting a continuous drain current of 73.0A at TC=+25°C. The device operates up to +175°C junction temperature with low input capacitance and fast switching speeds.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Features wettable flank terminals to facilitate improved optical inspection.
Includes 100% unclamped inductive switching (UIS) testing for robustness.

Applications

High frequency switching
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the component meets the IATF 16949 manufacturing standards required for your specific automotive change control protocols before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high thermal stability up to +175°C and low conduction losses. Ensure the gate drive voltage supports the specified RDS(ON) thresholds. Verify PCB layout accommodates the exposed drain pad for optimal thermal dissipation from the junction to case.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability requirements. It utilizes silicon technology within a molded plastic 'Green' compound package. The device is lead-free, halogen-free, and antimony-free, complying with RoHS directives.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-referencing requires matching BVDSS, RDS(ON), package type, and thermal characteristics to ensure functional compatibility without design modification.