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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMTH6005LCT is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-220-3 through-hole package and supports junction temperatures up to +175°C. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 60V, a continuous drain current (ID) of 100A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 6mΩ at VGS = 10V. The device has a total power dissipation of 125W at TC = +25°C and a thermal resistance from junction to case of 1.2°C/W.
Feature Summary
- Rated for operation in high ambient temperature environments with a maximum junction temperature of +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Designed with low input capacitance and low input/output leakage characteristics
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix 'LCT' corresponds to the TO-220-3 tube packaging configuration containing 50 pieces per tube. Confirm compliance with RoHS directives and AEC-Q101 qualification standards required for automotive-grade reliability before finalizing procurement specifications.
Selection Notes
Select this component when a through-hole mounting solution is required for high-current switching applications. The TO-220-3 package provides superior thermal performance compared to surface-mount alternatives, supporting up to 125W power dissipation under ideal heat sink conditions. Ensure gate drive voltages align with the specified RDS(ON) test conditions for optimal efficiency.
Part Context
This part belongs to the DMTH6005 series of N-channel MOSFETs designed for high-efficiency power management. While other variants like DMTH6005LK3-13 utilize a TO-252-3 DPAK package, the LCT suffix specifically designates the TO-220-3 form factor intended for higher power handling and easier manual assembly or prototyping scenarios.
Replacement Considerations
Direct pin-compatible replacements within the same family include DMTH6005LK3-13 (TO-252-3), though mechanical mounting differences apply. Verify that any substitute maintains the 60V BVDSS rating and meets the 175°C thermal requirement.
