DMTH6005LFGQ-7

$0.41

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cf857b57d778 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3223 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.38W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH6005LFGQ-7

Overview

The DMTH6005LFGQ-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 98A at a case temperature of +25°C. The device offers a low on-resistance of 4.1mΩ at VGS=10V and 7A at VGS=4.5V. It supports an operating junction temperature range from -55°C to +175°C and is qualified to AEC-Q101 standards for automotive reliability.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Low RDS(ON) minimizes conduction losses
Small form factor thermally efficient package

Applications

Synchronous rectification
Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against your manufacturing requirements, as it dictates the tape and reel quantity. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required by your region. Ensure the design accommodates the specified thermal resistance values for proper heat dissipation during operation.

Selection Notes

Select this component when high current handling and low on-state resistance are critical for efficiency. The small PowerDI3333-8 footprint allows for higher density designs compared to traditional packages. Consider the +175°C rating for applications exposed to elevated ambient temperatures. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. These devices are manufactured in IATF 16949 certified facilities and support PPAP documentation. The series targets demanding automotive environments requiring robust performance and strict change control protocols.

Replacement Considerations

Check datasheets for alternative parts offering similar BVDSS, ID, and RDS(ON) specifications. Verify pinout compatibility and package dimensions before substitution. Ensure any replacement also meets AEC-Q101 qualification if used in automotive contexts.