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Product Detailed Parameters
- Description：MOSFET N-CH 80V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：124.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8952 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.9W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8003SPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 120A at TC = +25°C. The device exhibits a low on-state resistance of 3.9mΩ at VGS = 10V and 6mΩ at VGS = 6V. It supports a junction temperature range of -55°C to +175°C with a total power dissipation of 125W when mounted on a thermal bias. Key dynamic parameters include a gate charge of 124.3nC and turn-off fall time of 20.9ns.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested in production
- Thermally efficient PowerDI5060-8 package design
- Lead-free finish compliant with RoHS directives
Applications
- Switching applications
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, including RoHS compliance and Halogen/Antimony-free status. Ensure the selected package variant matches the PCB footprint requirements for the PowerDI5060-8 (Type K) outline dimensions provided in the datasheet.
Selection Notes
Select this component for high-efficiency power management designs requiring robust performance in high ambient temperatures. The low RDS(ON) minimizes conduction losses, while the optimized switching characteristics support high-frequency operations. Consider the thermal resistance values and package mounting constraints when designing the heat dissipation strategy for the target application environment.
Part Context
This part belongs to the DMTH8003 series of advanced N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMTH8003SPS-13 specifically utilizes the PowerDI5060-8 package to provide a compact solution suitable for space-constrained power electronics.
Replacement Considerations
Consult the manufacturer's official documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.
