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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4979 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8004LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 100A at +25°C case temperature. The device offers a low on-resistance of 3.8mΩ at VGS=10V and 5.3mΩ at VGS=4.5V. It supports junction temperatures up to +175°C and includes 100% UIS testing for reliability.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching (UIS) testing in production
- Designed to minimize on-state losses with low RDS(ON)
- Constructed with lead-free finish and RoHS compliant materials
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the specific ordering suffix -13 corresponds to the 2,500-unit tape and reel carrier configuration. Confirm compliance with RoHS directives and halogen-free requirements if specified by the design. Ensure thermal management aligns with the package-limited current ratings provided in the datasheet.
Selection Notes
Select this component when an 80V rating and high current handling capability are required in a compact surface-mount footprint. Consider the thermal resistance values for both ambient and case cooling scenarios. Evaluate gate charge parameters against driver capabilities to ensure optimal switching performance.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs designed for power management applications. It utilizes the PowerDI5060-8/SWP package to provide robust thermal performance and high current density in a small outline form factor suitable for modern electronic designs.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and electrical characteristics.
