DMTH8012LPSQ-13

$0.88

Description：MOSFET N-CH 80V 10A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:609568a6dbf4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 10A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2051 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH8012LPSQ-13

Overview

The DMTH8012LPSQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a drain-source voltage (BVDSS) of 80V and operates up to a junction temperature of +175°C. The device offers a maximum on-resistance (RDS(ON)) of 17mΩ at VGS=10V with a continuous drain current (ID) of 50A at TC=+25°C. Packaged in PowerDI5060-8, it meets AEC-Q101 standards.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Rated for operation in high ambient temperature environments up to +175°C
Low RDS(ON) minimizes on-state losses for high conversion efficiency
Fast switching speed supported by low input capacitance

Applications

Synchronous rectifiers
Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment supports the specified thermal characteristics and package material ratings.

Selection Notes

Select this component when designing for automotive systems requiring high reliability and thermal resilience. The 80V rating and 175°C operating limit make it suitable for harsh electrical environments. Consider the PowerDI5060-8 package dimensions for PCB layout constraints and verify gate drive voltages align with the specified RDS(ON) performance curves for optimal efficiency.

Part Context

This part belongs to the DMTH series of power MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI®5060-8 surface mount package, which provides enhanced thermal dissipation compared to standard packages. The 'Q' in the part number indicates its qualification for automotive quality standards, distinguishing it from general-purpose industrial variants within the same electrical family.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package type specifications. Verify that any alternative component also holds AEC-Q101 qualification if the original design intent mandates automotive-grade compliance.