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The DN0150ADJ-7 is a dual NPN surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-963 package. The device features a collector-base voltage of 60 V, a collector-emitter voltage of 50 V, and an emitter-base voltage of 5 V. Continuous collector current is rated at 100 mA with a power dissipation capacity of 300 mW. DC current gain ranges from 120 to 240 at 2 mA. Transition frequency is specified at 60 MHz. Operating temperature spans from -55 °C to +150 °C.
Verify component authenticity through authorized channels due to obsolete status. Confirm datasheet revision DS31484 Rev. 4 matches requirements. Check RoHS compliance documentation. Validate SOT-963 package dimensions against PCB layout. Ensure storage conditions comply with J-STD-020D Level 1 moisture sensitivity rating.
Consider the DN0150BDJ-7 variant if PNP configuration is required instead of NPN. Evaluate thermal resistance of 417 °C/W for heat dissipation needs. Verify transition frequency sufficiency for signal processing applications. Assess packaging quantity of 10,000 units per tape and reel for production volume compatibility.
This component belongs to the DN0150 series of dual transistors produced by Diodes Incorporated. It shares the SOT-963 package form factor with related parts like the DN0150BDJ-7. The series targets small-signal switching and amplification tasks requiring compact surface mount solutions.
Datasheet explicitly recommends using DST847BDJ as a replacement part.
The maximum collector-base voltage (VCBO) is 60 V.
Yes, the DN0150ADJ-7 is lead-free by design and RoHS compliant.
The datasheet specifies DST847BDJ as the recommended replacement.